FDFS2P102 |
RFQ for FDFS2P102 Required Field |
 |
| Technical/Catalog Information | FDFS2P102 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.3A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 3.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 270pF @ 10V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDFS2P102 FDFS2P102 FDFS2P102TR ND FDFS2P102TRND FDFS2P102TR |
| Product | Manufacturers | Pack | D/C |
| FDFS2P102 | - | SOP8 | 04+/05+ |
The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Typical Application |
Features |
| • DC/DC converters• Load Switch• Motor Drives | • 3.3 A, 20 V. RDS(ON) = 0.125 Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5 V.• VF < 0.39 V @ 1 A (TJ = 125 oC).VF < 0.47 V @ 1 A.VF < 0.58 V @ 2 A.• Schottky and MOSFET incorporated into single power surface mount SO-8 package.• Electrically independent Schottky and MOSFET pinout for design flexibility. |
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-20 ±20 -3.3 -20 2 1.6 1 0.9 -55 to +150 |
V V | |
|
ID |
Drain Current - Continuous - Pulsed |
(Note 1a) |
A | |
|
PD |
Power Dissipation for Dual Operation |
(Note 1a) (Note 1b) (Note 1c) |
W | |
| Power Dissipation for Single Operation | ||||
|
TJ, TSTG |
Operating and Storage Temperature Range |
°C | ||
